Develop and validate multi-physics, silicon-calibrated TCAD models for 3DHI devices and interfaces to predict performance and reliability.
Develop and own TCAD modeling frameworks for advanced devices and interfaces relevant to 3DHI, including hybrid bonding contacts, TSVs, BEOL interconnects, and emerging device structures.
Perform multi-physics simulations (electrical, thermal, mechanical, and reliability) to predict performance, variability, and failure mechanisms across stacked, heterogeneous die systems.
Co-optimize devices, interconnect, and packaging designs by working closely with process integration, packaging, and circuit teams to close the loop between fabrication, measurement, and simulation.
Calibrate and validate TCAD models using silicon data from wafer-level test vehicles and process monitors; drive model-to-hardware correlation across corners and stress conditions.
Define simulation methodologies and best practices for 3D device and interface modeling (e.g., contact resistance, current crowding, electromigration, thermo-mechanical stress).
Engage with foundry, EDA, and materials partners to influence next-generation TCAD tool features and process design enablement for 3D-stacked systems.
Author technical documentation, modeling guidelines, and reference flows to support ecosystem adoption of TIE’s device and interface platforms.
Mentor junior engineers and technical staff, setting standards for modeling rigor and engineering judgment across the organization.

Ph.D. or M.S. in Electrical Engineering, Materials Science, Applied Physics, or a closely related field with strong emphasis on device physics and numerical simulation.
8+ years (Senior) or 12+ years (Principal) of hands-on experience with TCAD for semiconductor devices or interconnects.
Deep understanding of semiconductor device physics (MOSFETs, diodes, contacts) and transport mechanisms relevant to nanoscale and 3D structures.
Proficiency with commercial TCAD tools such as Synopsys Sentaurus, Silvaco Atlas/Victory, or equivalent multi-physics simulation environments.
Experience correlating TCAD models with silicon data and extracting physical parameters from measurements.
Strong background in process integration effects (doping, defects, interfaces, stress, and materials).
Ability to work cross-functionally with process, packaging, EDA, and system teams in a fast-moving R&D environment.
Relevant education and experience may be substituted as appropriate.

Competitive health benefits (employee premiums covered at 100%, family premiums at 50%)
Voluntary Vision, Dental, Life, and Disability insurance options
Generous paid vacation, sick time, and holidays
Teachers Retirement System of Texas, a defined benefit retirement plan, with 8.25% employer matching funds
Additional Voluntary Retirement Programs: Tax Sheltered Annuity 403(b) and a Deferred Compensation program 457(b)
Flexible spending account options for medical and childcare expenses
Robust free training access through LinkedIn Learning plus professional conference opportunities
Tuition assistance
Expansive employee discount program including athletic tickets
Free access to UT Austin's libraries and museums with staff ID card
Free rides on all UT Shuttle and Austin CapMetro buses with staff ID card

Senior/Principal TCAD Engineer

Key skills