Postdoc Position – Growth of AlN by Thermal Laser Epitaxy

Role Overview

• Pioneering the growth and doping of AlN using TLE
• Kinetic modeling of AlN growth during the TLE process
• Contributing to the installation and maintenance of the new TLE laboratory
• Growing samples for external partners of the application lab
• Structural, electrical, and optical characterization
• Data analysis, modeling, and independent planning of experiments
• Presentation of results at conferences and in publications

Requirements

• PhD in physics, electrical engineering, materials science, or a related field
• Strong background in semiconductor physics and thin-film growth by molecular beam epitaxy (MBE) or pulsed laser deposition (PLD)
• Strong background in the growth and doping of ultra-wide bandgap (UWBG) semiconductors
• Experience with structural, electrical, and optical characterization techniques
• Hands-on experience with maintaining ultra-high vacuum systems, e.g., MBE or PLD chambers
• Self-management and mindset for actively collaborating with a team of scientists and technicians
• Excellent spoken and written English skills

Benefits

• Job security and a good work-life balance
• Modern office located in the heart of Berlin with excellent public transport connections and a subsidized travel ticket
• Supportive environment with experts for various scientific sub-fields
• International and culturally diverse community
• Mobile work
• Possibility to participate in professional development and/or exchange programs